Infineon OptiMOS Type N-Channel MOSFET, 80 A, 60 V Enhancement, 3-Pin TO-220
- N° de stock RS:
- 215-2536
- Référence fabricant:
- IPP057N06N3GXKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 tube de 50 unités)*
76,80 €
(TVA exclue)
92,95 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 350 unité(s) expédiée(s) à partir du 05 janvier 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 1,536 € | 76,80 € |
| 100 - 200 | 1,398 € | 69,90 € |
| 250 - 450 | 1,306 € | 65,30 € |
| 500 - 1200 | 1,213 € | 60,65 € |
| 1250 + | 1,152 € | 57,60 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 215-2536
- Référence fabricant:
- IPP057N06N3GXKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5.7mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 82nC | |
| Maximum Power Dissipation Pd | 115W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5.7mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 82nC | ||
Maximum Power Dissipation Pd 115W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter.
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Ideal for fast switching applications
RoHS compliant - halogen free
MSL1 rated
Liens connexes
- Infineon OptiMOS™ N-Channel MOSFET 60 V, 3-Pin TO-220 IPP057N06N3GXKSA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 60 V, 3-Pin TO-220 IPP052N06L3GXKSA1
- Infineon OptiMOS™ -T2 N-Channel MOSFET 60 V, 3-Pin TO-220 IPP80N06S407AKSA2
- Infineon OptiMOS™ 3 N-Channel MOSFET 80 V, 3-Pin TO-220 IPP057N08N3GXKSA1
- Infineon OptiMOS™ 5 N-Channel MOSFET 80 V, 3-Pin TO-220 IPP052N08N5AKSA1
- Infineon OptiMOS™ N-Channel MOSFET 75 V, 3-Pin TO-220 IPP80N08S2L07AKSA1
- Infineon OptiMOS™ N-Channel MOSFET 55 V, 3-Pin TO-220 IPP80N06S209AKSA2
- Infineon OptiMOS™ N-Channel MOSFET 80 V, 3-Pin TO-220 IPP023N08N5AKSA1
