Infineon Dual N Channel Logic Level Enhancement Mode OptiMOS-T2 2 Type N-Channel MOSFET, 20 A, 60 V Enhancement, 8-Pin
- N° de stock RS:
- 214-9062
- Référence fabricant:
- IPG20N06S4L11AATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 10 unités)*
13,44 €
(TVA exclue)
16,26 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 14 720 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 40 | 1,344 € | 13,44 € |
| 50 - 90 | 1,277 € | 12,77 € |
| 100 - 240 | 1,223 € | 12,23 € |
| 250 - 490 | 1,169 € | 11,69 € |
| 500 + | 1,088 € | 10,88 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 214-9062
- Référence fabricant:
- IPG20N06S4L11AATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TDSON | |
| Series | OptiMOS-T2 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 11.2mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Maximum Gate Source Voltage Vgs | ±16 V | |
| Maximum Power Dissipation Pd | 65W | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Dual N Channel Logic Level Enhancement Mode | |
| Maximum Operating Temperature | 175°C | |
| Length | 5.15mm | |
| Width | 5.9 mm | |
| Height | 1mm | |
| Standards/Approvals | RoHS, MSL1, AEC Q101 | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TDSON | ||
Series OptiMOS-T2 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 11.2mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Maximum Gate Source Voltage Vgs ±16 V | ||
Maximum Power Dissipation Pd 65W | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Dual N Channel Logic Level Enhancement Mode | ||
Maximum Operating Temperature 175°C | ||
Length 5.15mm | ||
Width 5.9 mm | ||
Height 1mm | ||
Standards/Approvals RoHS, MSL1, AEC Q101 | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Infineon range of new OptiMOS -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS -T2 product family extends the existing families of OptiMOS -T and OptiMOS. The Dual N-channel Logic Level - Enhancement mode, are feasible for automatic optical inspection (AOI). OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements.
The product is AEC Q101 qualified
100% Avalanche tested
It has 175°C operating temperature
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