DiodesZetex Dual DMTH4008LPDWQ 1 Type N-Channel MOSFET, 46.2 A, 40 V Enhancement, 8-Pin PowerDI5060 DMTH4008LPDWQ-13
- N° de stock RS:
- 213-9248
- Référence fabricant:
- DMTH4008LPDWQ-13
- Fabricant:
- DiodesZetex
Sous-total (1 paquet de 10 unités)*
7,41 €
(TVA exclue)
8,97 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
- 2 710 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 40 | 0,741 € | 7,41 € |
| 50 - 90 | 0,724 € | 7,24 € |
| 100 - 240 | 0,648 € | 6,48 € |
| 250 - 990 | 0,637 € | 6,37 € |
| 1000 + | 0,519 € | 5,19 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 213-9248
- Référence fabricant:
- DMTH4008LPDWQ-13
- Fabricant:
- DiodesZetex
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 46.2A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerDI5060 | |
| Series | DMTH4008LPDWQ | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0123Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 39.4W | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 5.8nC | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, MIL-STD-202, AEC-Q101, J-STD-020, UL 94V-0 | |
| Height | 1.1mm | |
| Length | 5.15mm | |
| Width | 6.4 mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | AEC-Q101, AEC-Q200, AEC-Q100 | |
| Sélectionner tout | ||
|---|---|---|
Marque DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 46.2A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerDI5060 | ||
Series DMTH4008LPDWQ | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0123Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 39.4W | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 5.8nC | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, MIL-STD-202, AEC-Q101, J-STD-020, UL 94V-0 | ||
Height 1.1mm | ||
Length 5.15mm | ||
Width 6.4 mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard AEC-Q101, AEC-Q200, AEC-Q100 | ||
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