DiodesZetex Dual DMT6015LPDW 1 Type N-Channel MOSFET, 17.1 A, 60 V Enhancement, 8-Pin PowerDI5060 DMT6015LPDW-13
- N° de stock RS:
- 213-9212
- Référence fabricant:
- DMT6015LPDW-13
- Fabricant:
- DiodesZetex
Sous-total (1 paquet de 25 unités)*
9,75 €
(TVA exclue)
11,75 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
- Plus 4 950 unité(s) expédiée(s) à partir du 19 janvier 2026
Unité | Prix par unité | le paquet* |
|---|---|---|
| 25 - 25 | 0,39 € | 9,75 € |
| 50 - 75 | 0,38 € | 9,50 € |
| 100 - 225 | 0,369 € | 9,23 € |
| 250 - 975 | 0,36 € | 9,00 € |
| 1000 + | 0,351 € | 8,78 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 213-9212
- Référence fabricant:
- DMT6015LPDW-13
- Fabricant:
- DiodesZetex
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 17.1A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | DMT6015LPDW | |
| Package Type | PowerDI5060 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.18Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 8.6nC | |
| Forward Voltage Vf | 0.7V | |
| Maximum Power Dissipation Pd | 7.9W | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Length | 5.15mm | |
| Standards/Approvals | MIL-STD-202, UL 94V-0, RoHS, J-STD-020, AEC-Q101 | |
| Height | 1.1mm | |
| Width | 6.4 mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | AEC-Q100, AEC-Q101, AEC-Q200 | |
| Sélectionner tout | ||
|---|---|---|
Marque DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 17.1A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series DMT6015LPDW | ||
Package Type PowerDI5060 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.18Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 8.6nC | ||
Forward Voltage Vf 0.7V | ||
Maximum Power Dissipation Pd 7.9W | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Length 5.15mm | ||
Standards/Approvals MIL-STD-202, UL 94V-0, RoHS, J-STD-020, AEC-Q101 | ||
Height 1.1mm | ||
Width 6.4 mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard AEC-Q100, AEC-Q101, AEC-Q200 | ||
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