STMicroelectronics Type N-Channel MOSFET, 48 A, 650 V Enhancement, 3-Pin TO-247 STWA68N65DM6

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N° de stock RS:
212-2108
Référence fabricant:
STWA68N65DM6
Fabricant:
STMicroelectronics
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Marque

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

48A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.059Ω

Channel Mode

Enhancement

MDMesh M6 MOSFET N-CH


The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converter.

Fast-recovery body diode

Lower RDS(on) per area vs previous generation

Low gate charge, input capacitance and resistance

100% avalanche tested

Extremely high dv/dt ruggedness