STMicroelectronics DM6 Type N-Channel MOSFET, 33 A, 650 V Enhancement, 3-Pin TO-247 STW50N65DM6
- N° de stock RS:
- 204-3948
- Référence fabricant:
- STW50N65DM6
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 2 unités)*
9,89 €
(TVA exclue)
11,966 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 22 unité(s) expédiée(s) à partir du 31 août 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 4,945 € | 9,89 € |
| 20 - 98 | 4,82 € | 9,64 € |
| 100 - 198 | 4,71 € | 9,42 € |
| 200 + | 4,655 € | 9,31 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 204-3948
- Référence fabricant:
- STW50N65DM6
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 33A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | DM6 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 91mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 250W | |
| Typical Gate Charge Qg @ Vgs | 52.5nC | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.75mm | |
| Width | 5.15mm | |
| Standards/Approvals | No | |
| Height | 20.15mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 33A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series DM6 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 91mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 250W | ||
Typical Gate Charge Qg @ Vgs 52.5nC | ||
Maximum Gate Source Voltage Vgs 25V | ||
Maximum Operating Temperature 175°C | ||
Length 15.75mm | ||
Width 5.15mm | ||
Standards/Approvals No | ||
Height 20.15mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
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