Vishay E Type N-Channel Power MOSFET, 13 A, 800 V Enhancement, 3-Pin TO-263
- N° de stock RS:
- 210-4969
- Référence fabricant:
- SIHB15N80AE-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 50 unités)*
78,00 €
(TVA exclue)
94,50 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 2 950 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 1,56 € | 78,00 € |
| 100 - 200 | 1,248 € | 62,40 € |
| 250 + | 1,092 € | 54,60 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 210-4969
- Référence fabricant:
- SIHB15N80AE-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | E | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 304mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 156W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 9.65mm | |
| Standards/Approvals | RoHS | |
| Length | 14.61mm | |
| Height | 4.06mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series E | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 304mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30V | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 156W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 9.65mm | ||
Standards/Approvals RoHS | ||
Length 14.61mm | ||
Height 4.06mm | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 800V Drain Source Voltage, 13A Continuous Drain Current - SIHB15N80AE-GE3
This power MOSFET is a high-voltage N-channel transistor intended for power switching in industrial electronics. It is designed for surface-mount assembly in TO-263 packages and operates across a wide thermal range for demanding applications where robust voltage handling and Compact mounting are required.
Features and Benefits:
• 800V drain rating enables high-voltage switching applications • 13 A continuous drain current supports substantial load currents • 304 mΩ Rds(on) reduces conduction losses during operation • 35 nC typical gate charge enables efficient switching control • 30V maximum gate drive accommodates common gate-drive voltages • 156W power dissipation improves thermal handling under load
Applications
• Suitable for high-voltage motor drive stages in automation systems • Ideal for power supplies requiring Compact surface-mount switches • Used for industrial inverter and converter switching duties • Can be used for high-voltage protection and clamp circuits
What temperature range can it operate across?
It functions from -55 °C up to a maximum junction temperature of 150 °C for high-temperature environments.
What package and mounting method does it use?
It is supplied in a TO-263 package intended for surface-mount installation on boards.
What gate drive limitations should designers observe?
The device must not exceed a gate-to-source voltage of 30V to avoid gate stress.
How does its power dissipation influence thermal design?
The 156W rating guides heatsinking and PCB copper allocation to keep junction temperatures within limits.
What pin configuration is provided?
The component offers a three-pin arrangement compatible with standard power MOSFET layouts.
Liens connexes
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