Toshiba TPH1R306PL Type N-Channel MOSFET, 100 A, 60 V Enhancement, 8-Pin SOP TPH1R306PL,L1Q(M
- N° de stock RS:
- 206-9790
- Référence fabricant:
- TPH1R306PL,L1Q(M
- Fabricant:
- Toshiba
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 5 unités)*
14,57 €
(TVA exclue)
17,63 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 2,914 € | 14,57 € |
| 50 - 495 | 2,27 € | 11,35 € |
| 500 - 995 | 1,852 € | 9,26 € |
| 1000 - 2495 | 1,816 € | 9,08 € |
| 2500 + | 1,79 € | 8,95 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 206-9790
- Référence fabricant:
- TPH1R306PL,L1Q(M
- Fabricant:
- Toshiba
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | TPH1R306PL | |
| Package Type | SOP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.3Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 91nC | |
| Maximum Power Dissipation Pd | 170W | |
| Maximum Operating Temperature | 150°C | |
| Length | 6mm | |
| Height | 0.9mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series TPH1R306PL | ||
Package Type SOP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.3Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 91nC | ||
Maximum Power Dissipation Pd 170W | ||
Maximum Operating Temperature 150°C | ||
Length 6mm | ||
Height 0.9mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Toshiba silicon N-channel MOSFET having high-speed switching properties. It is mainly used in high-efficiency DC-DC converters, switching voltage regulators and motor drivers.
Low drain-source on-resistance 1.0 m?
Storage temperature -55 to 175°C
Liens connexes
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