DiodesZetex Dual DMG1023 1 Type P-Channel MOSFET, 1.03 A, 20 V Enhancement, 6-Pin SOT-563 DMG1023UVQ-7
- N° de stock RS:
- 206-0066
- Référence fabricant:
- DMG1023UVQ-7
- Fabricant:
- DiodesZetex
Sous-total (1 bobine de 3000 unités)*
285,00 €
(TVA exclue)
345,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
- Expédition à partir du 20 septembre 2027
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 - 6000 | 0,095 € | 285,00 € |
| 9000 - 21000 | 0,092 € | 276,00 € |
| 24000 - 42000 | 0,09 € | 270,00 € |
| 45000 + | 0,088 € | 264,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 206-0066
- Référence fabricant:
- DMG1023UVQ-7
- Fabricant:
- DiodesZetex
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.03A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | DMG1023 | |
| Package Type | SOT-563 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 1.5Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -0.8V | |
| Maximum Gate Source Voltage Vgs | 6V | |
| Maximum Power Dissipation Pd | 530W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 622.4nC | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Width | 1.2mm | |
| Height | 0.6mm | |
| Standards/Approvals | No | |
| Length | 1.6mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque DiodesZetex | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.03A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series DMG1023 | ||
Package Type SOT-563 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 1.5Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -0.8V | ||
Maximum Gate Source Voltage Vgs 6V | ||
Maximum Power Dissipation Pd 530W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 622.4nC | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Width 1.2mm | ||
Height 0.6mm | ||
Standards/Approvals No | ||
Length 1.6mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- CN
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