DiodesZetex Dual DMC2710 2 Type P, Type N-Channel MOSFET, 800 mA, 20 V Enhancement, 6-Pin SOT-563 DMC2710UV-7
- N° de stock RS:
- 206-0056
- Référence fabricant:
- DMC2710UV-7
- Fabricant:
- DiodesZetex
Sous-total (1 bobine de 3000 unités)*
261,00 €
(TVA exclue)
315,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
- 3 000 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 - 6000 | 0,087 € | 261,00 € |
| 9000 - 21000 | 0,084 € | 252,00 € |
| 24000 - 42000 | 0,082 € | 246,00 € |
| 45000 + | 0,08 € | 240,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 206-0056
- Référence fabricant:
- DMC2710UV-7
- Fabricant:
- DiodesZetex
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | DiodesZetex | |
| Channel Type | Type P, Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 800mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-563 | |
| Series | DMC2710 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.7Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 6 V | |
| Typical Gate Charge Qg @ Vgs | 0.6nC | |
| Maximum Power Dissipation Pd | 0.8W | |
| Forward Voltage Vf | 0.7V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Standards/Approvals | UL 94V-0, MIL-STD-202, RoHS, J-STD-020, AEC-Q101 | |
| Length | 1.55mm | |
| Height | 1.5mm | |
| Width | 1.1 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101, AEC-Q100, AEC-Q200 | |
| Sélectionner tout | ||
|---|---|---|
Marque DiodesZetex | ||
Channel Type Type P, Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 800mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-563 | ||
Series DMC2710 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.7Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 6 V | ||
Typical Gate Charge Qg @ Vgs 0.6nC | ||
Maximum Power Dissipation Pd 0.8W | ||
Forward Voltage Vf 0.7V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Standards/Approvals UL 94V-0, MIL-STD-202, RoHS, J-STD-020, AEC-Q101 | ||
Length 1.55mm | ||
Height 1.5mm | ||
Width 1.1 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101, AEC-Q100, AEC-Q200 | ||
- Pays d'origine :
- CN
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