onsemi NTH Type N-Channel MOSFET & Diode, 31 A, 1200 V Enhancement, 3-Pin TO-247

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N° de stock RS:
205-2501
Référence fabricant:
NTHL080N120SC1A
Fabricant:
onsemi
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Marque

onsemi

Channel Type

Type N

Product Type

MOSFET & Diode

Maximum Continuous Drain Current Id

31A

Maximum Drain Source Voltage Vds

1200V

Series

NTH

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

110mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

56nC

Maximum Power Dissipation Pd

178W

Maximum Gate Source Voltage Vgs

25 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

4V

Maximum Operating Temperature

150°C

Length

39.75mm

Standards/Approvals

RoHS

Height

4.48mm

Width

15.37 mm

Automotive Standard

No

Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L


The ON Semiconductor NTH series SiC N-channel 1200V MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Continuous Drain Current rating is 31A

Drain to source on resistance rating is 110mohm

High speed switching and low capacitance

100% UIL tested

Low effective output capacitance

Package type is TO-247-3LD

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