Vishay EF Type N-Channel Power MOSFET, 16 A, 600 V Enhancement, 3-Pin TO-220 SIHF068N60EF-GE3
- N° de stock RS:
- 204-7249
- Référence fabricant:
- SIHF068N60EF-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 5 unités)*
28,02 €
(TVA exclue)
33,905 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 25 janvier 2027
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 20 | 5,604 € | 28,02 € |
| 25 - 45 | 5,044 € | 25,22 € |
| 50 - 120 | 4,612 € | 23,06 € |
| 125 - 245 | 4,488 € | 22,44 € |
| 250 + | 4,378 € | 21,89 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 204-7249
- Référence fabricant:
- SIHF068N60EF-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | EF | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 68mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 39W | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 10mm | |
| Length | 28.6mm | |
| Standards/Approvals | RoHS | |
| Height | 4.6mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series EF | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 68mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 39W | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 10mm | ||
Length 28.6mm | ||
Standards/Approvals RoHS | ||
Height 4.6mm | ||
Automotive Standard No | ||
Vishay Series EF Power MOSFET, 600V Maximum Drain Source Voltage, 16A Maximum Continuous Drain Current - SIHF068N60EF-GE3
This power MOSFET is a high-voltage N-channel enhancement device intended for power switching and control in industrial and electronic systems. It is optimised for through-hole mounting in TO-220 packages and suits applications requiring robust voltage handling and gate-drive flexibility. The device operates across a wide temperature range and is suitable for designs where conventional surface-mount parts are impractical.
Features and Benefits:
• 600V drain-source rating enables high-voltage switching capability • 68mΩ Rds(on) minimises conduction losses during load operation • 16A continuous drain current supports moderate power loads • 51nC typical gate charge allows predictable switching performance • 39W maximum power dissipation manages thermal loading in circuits • 30V gate tolerance permits compatibility with standard gate drivers
Applications
• Suitable for mains-side switching in industrial converters • Ideal for high-voltage motor drive front-ends • Used for switch-mode power supplies handling elevated voltages • Can be used for power-factor correction stages in larger systems • Used with discrete power assemblies requiring through-hole mounting
What temperature extremes can the device withstand during operation?
It is specified to operate down to -55°C and up to 150°C, accommodating cold-start conditions and high-temperature environments.
How should thermal management be approached for sustained operation?
With a 39W maximum dissipation, a heatsink or chassis mounting is recommended to maintain junction temperature within safe limits during continuous loads.
What gate-drive considerations are necessary for reliable switching?
The gate must be driven within ±30V
the typical gate charge of 51nC helps estimate required driver current and switching losses.
Does the packaging affect board assembly choices?
The through-hole TO-220 format facilitates manual or wave solder assembly and provides a robust mechanical connection for high-power layouts.
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