Vishay EF Type N-Channel Power MOSFET, 16 A, 600 V Enhancement, 3-Pin TO-220 SIHF068N60EF-GE3

N° de stock RS:: 204-7248
Référence fabricant:: SIHF068N60EF-GE3
Fabricant:: Vishay

Vishay EF Type N-Channel Power MOSFET, 16 A, 600 V Enhancement, 3-Pin TO-220 SIHF068N60EF-GE3

Sous-total (1 bobine de 1000 unités)*

2 676,00 €

(TVA exclue)

3 238,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 15 février 2027

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Unité	Prix par unité	la bobine*
1000 +	2,676 €	2 676,00 €

*Prix donné à titre indicatif

N° de stock RS:: 204-7248
Référence fabricant:: SIHF068N60EF-GE3
Fabricant:: Vishay

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	16A
	Maximum Drain Source Voltage Vds	600V
	Series	EF
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	68mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	39W
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	30V
	Typical Gate Charge Qg @ Vgs	51nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Width	10mm
	Length	28.6mm
	Height	4.6mm
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 16A
	Maximum Drain Source Voltage Vds 600V
	Series EF
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 68mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 39W
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 30V
	Typical Gate Charge Qg @ Vgs 51nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Width 10mm
	Length 28.6mm
	Height 4.6mm
	Automotive Standard No

Vishay Series EF Power MOSFET, 600V Maximum Drain Source Voltage, 16A Maximum Continuous Drain Current - SIHF068N60EF-GE3

This power MOSFET is a high-voltage N-channel switching device designed for use in power conversion and control circuits where robust voltage handling and through-hole mounting are required. It operates across a broad temperature range and is suited to applications demanding sustained drain current and controlled gate-drive characteristics, presented in a TO-220 through-hole package for conventional board assembly.

Features and Benefits:

• 600V drain voltage for high-voltage switching applications
• 16A continuous drain current for sustained load handling
• 68mΩ Rds(on) to reduce conduction losses
• 51nC typical gate charge for predictable switching control
• 39W maximum power dissipation for thermal planning
• ±30V gate tolerance to accommodate varied gate-drive amplitudes

Applications

• Suitable for industrial power converters and inverters
• Ideal for high-voltage motor drive stages
• Used for power supplies requiring through-hole mounting
• Can be used for switching elements in lighting controllers
• Suitable for test rigs and repair of legacy hardware

What temperature extremes can it tolerate during operation?

It is specified to function from -55°C up to 150°C, allowing use in environments with wide thermal variation.

How does the package aid thermal management on a populated board?

The TO-220 through-hole format permits attachment of a heatsink to its exposed tab, enabling improved dissipation up to its 39W rating when appropriately mounted.

What gate-drive considerations are necessary for switching performance?

Design should account for the 51nC gate charge when sizing drivers to achieve desired rise/fall times and switching losses at target frequencies.

What type of channel and conduction mode does it use?

It is an N-channel device operating in enhancement mode, requiring a positive gate-source drive to conduct.