Vishay EF Type N-Channel Power MOSFET, 16 A, 600 V Enhancement, 3-Pin TO-220 SIHF068N60EF-GE3

N° de stock RS:: 204-7248
Référence fabricant:: SIHF068N60EF-GE3
Fabricant:: Vishay

Vishay EF Type N-Channel Power MOSFET, 16 A, 600 V Enhancement, 3-Pin TO-220 SIHF068N60EF-GE3

Sous-total (1 bobine de 1000 unités)*

2 676,00 €

(TVA exclue)

3 238,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 25 janvier 2027

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Unité	Prix par unité	la bobine*
1000 +	2,676 €	2 676,00 €

*Prix donné à titre indicatif

N° de stock RS:: 204-7248
Référence fabricant:: SIHF068N60EF-GE3
Fabricant:: Vishay

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	16A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-220
	Series	EF
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	68mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	30V
	Maximum Power Dissipation Pd	39W
	Typical Gate Charge Qg @ Vgs	51nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Width	10mm
	Length	28.6mm
	Standards/Approvals	RoHS
	Height	4.6mm
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 16A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-220
	Series EF
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 68mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 30V
	Maximum Power Dissipation Pd 39W
	Typical Gate Charge Qg @ Vgs 51nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Width 10mm
	Length 28.6mm
	Standards/Approvals RoHS
	Height 4.6mm
	Automotive Standard No

Vishay Series EF Power MOSFET, 600V Maximum Drain Source Voltage, 16A Maximum Continuous Drain Current - SIHF068N60EF-GE3

This power MOSFET is a high-voltage N-channel enhancement device intended for power switching and control in industrial and electronic systems. It is optimised for through-hole mounting in TO-220 packages and suits applications requiring robust voltage handling and gate-drive flexibility. The device operates across a wide temperature range and is suitable for designs where conventional surface-mount parts are impractical.

Features and Benefits:

• 600V drain-source rating enables high-voltage switching capability • 68mΩ Rds(on) minimises conduction losses during load operation • 16A continuous drain current supports moderate power loads • 51nC typical gate charge allows predictable switching performance • 39W maximum power dissipation manages thermal loading in circuits • 30V gate tolerance permits compatibility with standard gate drivers

Applications

• Suitable for mains-side switching in industrial converters • Ideal for high-voltage motor drive front-ends • Used for switch-mode power supplies handling elevated voltages • Can be used for power-factor correction stages in larger systems • Used with discrete power assemblies requiring through-hole mounting

What temperature extremes can the device withstand during operation?

It is specified to operate down to -55°C and up to 150°C, accommodating cold-start conditions and high-temperature environments.

How should thermal management be approached for sustained operation?

With a 39W maximum dissipation, a heatsink or chassis mounting is recommended to maintain junction temperature within safe limits during continuous loads.

What gate-drive considerations are necessary for reliable switching?

The gate must be driven within ±30V

the typical gate charge of 51nC helps estimate required driver current and switching losses.

Does the packaging affect board assembly choices?

The through-hole TO-220 format facilitates manual or wave solder assembly and provides a robust mechanical connection for high-power layouts.