STMicroelectronics SuperMESH Type N-Channel MOSFET, 6 A, 600 V Enhancement, 3-Pin TO-220FP STP6NK60ZFP
- N° de stock RS:
- 151-415
- Référence fabricant:
- STP6NK60ZFP
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total (1 tube de 50 unités)*
56,65 €
(TVA exclue)
68,55 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 1 750 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 450 | 1,133 € | 56,65 € |
| 500 - 950 | 1,076 € | 53,80 € |
| 1000 + | 0,997 € | 49,85 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 151-415
- Référence fabricant:
- STP6NK60ZFP
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220FP | |
| Series | SuperMESH | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.2Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Forward Voltage Vf | 1.6V | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 30.6mm | |
| Standards/Approvals | RoHS | |
| Width | 10.4 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220FP | ||
Series SuperMESH | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.2Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Forward Voltage Vf 1.6V | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 30.6mm | ||
Standards/Approvals RoHS | ||
Width 10.4 mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The STMicroelectronics Power MOSFET developed using Super MESH technology, achieved through optimization of well established strip based Power MESH layout. In addition to a significant reduction in on resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitance
Liens connexes
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