STMicroelectronics MDmesh DM6 Type N-Channel MOSFET, 53 A, 650 V Enhancement, 8-Pin ACEPACK SMIT SH63N65DM6AG
- N° de stock RS:
- 152-112
- Référence fabricant:
- SH63N65DM6AG
- Fabricant:
- STMicroelectronics
Sous-total (1 bobine de 200 unités)*
5 372,00 €
(TVA exclue)
6 500,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 200 unité(s) expédiée(s) à partir du 13 avril 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 200 + | 26,86 € | 5 372,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 152-112
- Référence fabricant:
- SH63N65DM6AG
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 53A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | ACEPACK SMIT | |
| Series | MDmesh DM6 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 64mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.55V | |
| Typical Gate Charge Qg @ Vgs | 8nC | |
| Maximum Power Dissipation Pd | 424W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | AQG 324 | |
| Automotive Standard | AEC | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 53A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type ACEPACK SMIT | ||
Series MDmesh DM6 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 64mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.55V | ||
Typical Gate Charge Qg @ Vgs 8nC | ||
Maximum Power Dissipation Pd 424W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals AQG 324 | ||
Automotive Standard AEC | ||
- Pays d'origine :
- CN
The STMicroelectronics device combines two MOSFETs in a half-bridge topology. The ACEPACK SMIT is a very Compact and rugged power module in a surface mount package for easy assembly. Thanks to the DBC substrate, the ACEPACK SMIT package offers low thermal resistance coupled with an isolated top-side thermal pad. The high design flexibility of the package enables several configurations, including phase legs, boost, and single switch through different combinations of the internal power switches.
AQG 324 qualified
Half-bridge power module
650 V blocking voltage
Fast recovery body diode
Very low switching energies
Low package inductance
Liens connexes
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