onsemi NVH Type N-Channel MOSFET, 102 A, 1200 V Enhancement, 4-Pin TO-247 NVH4L020N120SC1
- N° de stock RS:
- 202-5735
- Référence fabricant:
- NVH4L020N120SC1
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 unité)*
42,31 €
(TVA exclue)
51,20 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- 32 unité(s) expédiée(s) à partir du 06 janvier 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 42,31 € |
| 10 - 99 | 36,47 € |
| 100 + | 31,62 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 202-5735
- Référence fabricant:
- NVH4L020N120SC1
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 102A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | NVH | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 28mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Typical Gate Charge Qg @ Vgs | 220nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 510W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101 and PPAP Capable | |
| Width | 5.2 mm | |
| Length | 15.8mm | |
| Height | 22.74mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 102A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series NVH | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 28mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Typical Gate Charge Qg @ Vgs 220nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 510W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101 and PPAP Capable | ||
Width 5.2 mm | ||
Length 15.8mm | ||
Height 22.74mm | ||
Automotive Standard No | ||
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 20 mohm, 1200 V, M1, TO247−4L Silicon Carbide MOSFET, N-Channel, 1200 V, 20 mΩ, TO247-4L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 102 Ampere and 1200 Volts. It can be used in Automotive on board charger, DC or DC Converter applications.
AEC Q101 qualified
Production part approval process Capable
100% avalanche tested
Low effective output capacitance
Liens connexes
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