onsemi N-Channel NTTF 1 Type N-Channel MOSFET, 60 A, 40 V Enhancement, 12-Pin WQFN NTTFD4D0N04HLTWG
- N° de stock RS:
- 202-5718
- Référence fabricant:
- NTTFD4D0N04HLTWG
- Fabricant:
- onsemi
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 25 unités)*
38,70 €
(TVA exclue)
46,825 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Dernier stock RS
- 7 225 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le paquet* |
|---|---|---|
| 25 - 75 | 1,548 € | 38,70 € |
| 100 - 225 | 1,334 € | 33,35 € |
| 250 + | 1,156 € | 28,90 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 202-5718
- Référence fabricant:
- NTTFD4D0N04HLTWG
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | WQFN | |
| Series | NTTF | |
| Mount Type | Surface | |
| Pin Count | 12 | |
| Maximum Drain Source Resistance Rds | 4.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 26W | |
| Forward Voltage Vf | 0.78V | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Transistor Configuration | N-Channel | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.3mm | |
| Standards/Approvals | RoHS Compliant | |
| Height | 0.75mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type WQFN | ||
Series NTTF | ||
Mount Type Surface | ||
Pin Count 12 | ||
Maximum Drain Source Resistance Rds 4.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 26W | ||
Forward Voltage Vf 0.78V | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Transistor Configuration N-Channel | ||
Maximum Operating Temperature 150°C | ||
Length 3.3mm | ||
Standards/Approvals RoHS Compliant | ||
Height 0.75mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
The ON Semiconductor Symmetrical Dual N-Channel MOSFET includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. It is used in Computing, Communications, General purpose point of load applications.
Low inductance packaging
Lower switching losses
RoHS compliant
Liens connexes
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