onsemi N-Channel NTTF 1 Type N-Channel MOSFET, 60 A, 40 V Enhancement, 12-Pin WQFN
- N° de stock RS:
- 202-5717
- Référence fabricant:
- NTTFD4D0N04HLTWG
- Fabricant:
- onsemi
Sous-total (1 bobine de 3000 unités)*
2 358,00 €
(TVA exclue)
2 853,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Dernier stock RS
- 6 000 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 + | 0,786 € | 2 358,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 202-5717
- Référence fabricant:
- NTTFD4D0N04HLTWG
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | WQFN | |
| Series | NTTF | |
| Mount Type | Surface | |
| Pin Count | 12 | |
| Maximum Drain Source Resistance Rds | 4.5mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.78V | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 26W | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | N-Channel | |
| Length | 3.3mm | |
| Height | 0.75mm | |
| Width | 3.3 mm | |
| Standards/Approvals | RoHS Compliant | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type WQFN | ||
Series NTTF | ||
Mount Type Surface | ||
Pin Count 12 | ||
Maximum Drain Source Resistance Rds 4.5mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.78V | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 26W | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration N-Channel | ||
Length 3.3mm | ||
Height 0.75mm | ||
Width 3.3 mm | ||
Standards/Approvals RoHS Compliant | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
The ON Semiconductor Symmetrical Dual N-Channel MOSFET includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. It is used in Computing, Communications, General purpose point of load applications.
Low inductance packaging
Lower switching losses
RoHS compliant
Liens connexes
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