onsemi Type N-Channel MOSFET, 20 A, 650 V Enhancement, 3-Pin TO-263 NVB190N65S3F
- N° de stock RS:
- 195-2667
- Référence fabricant:
- NVB190N65S3F
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 paquet de 10 unités)*
24,33 €
(TVA exclue)
29,44 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 270 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 90 | 2,433 € | 24,33 € |
| 100 - 240 | 2,097 € | 20,97 € |
| 250 + | 1,819 € | 18,19 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 195-2667
- Référence fabricant:
- NVB190N65S3F
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 190mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 162W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.67mm | |
| Height | 4.58mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 190mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 162W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Maximum Operating Temperature 150°C | ||
Length 10.67mm | ||
Height 4.58mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.
701 V @ TJ = 150°C
Higher system reliability at low temperature operation
Ultra Low Gate Charge (Typ. Qg = 34 nC)
Lower switching loss
Low Effective Output Capacitance (Typ. Coss(eff.) = 314 pF)
Lower switching loss
PPAP Capable
Typ. RDS(on) = 158 mΩ
Application
HV DC/DC converter
Liens connexes
- onsemi Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263
- onsemi Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263
- onsemi Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263
- onsemi Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263
- onsemi Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263
- onsemi Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263 NVB150N65S3F
- onsemi Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263 NTB095N65S3HF
- onsemi Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263 NTB110N65S3HF