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Sélectionner tout	Attribut	Valeur
	Marque	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	30A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	110mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	240W
	Typical Gate Charge Qg @ Vgs	62nC
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	4.58mm
	Length	10.67mm
	Width	9.65 mm
	Automotive Standard	No

	Sélectionner tout
	Marque onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 30A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 110mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 240W
	Typical Gate Charge Qg @ Vgs 62nC
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 4.58mm
	Length 10.67mm
	Width 9.65 mm
	Automotive Standard No

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.

700 V @ TJ = 150 °C

Ultra Low Gate Charge (Typ. Qg = 62 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 522 pF)

Excellent body diode performance (low Qrr, robust body diode)

Optimized Capacitance

Typ. RDS(on) = 98 mΩ

Higher system reliability at low temperature operation

Lower switching loss

Higher system reliability in LLC and Phase shift full bridge circuit

Lower peak Vds and lower Vgs oscillation

Applications

Telecommunication

Cloud system

Industrial

End Products

Telecom power

Server power

EV charger

Solar / UPS

Unité	Prix par unité	le paquet*
2 - 18	5,735 €	11,47 €
20 - 198	4,945 €	9,89 €
200 +	4,285 €	8,57 €

onsemi Type N-Channel MOSFET, 30 A, 650 V Enhancement, 3-Pin TO-263 NTB110N65S3HF

Frais de livraison offerts pour toute commande de plus de 75,00 €

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