onsemi NVMYS021N06CL Type N-Channel MOSFET, 27 A, 60 V Enhancement, 4-Pin LFPAK

Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
N° de stock RS:
195-2549
Référence fabricant:
NVMYS021N06CLTWG
Fabricant:
onsemi
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout

Marque

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

27A

Maximum Drain Source Voltage Vds

60V

Series

NVMYS021N06CL

Package Type

LFPAK

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

31.5mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

28W

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

5nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

4.25 mm

Standards/Approvals

No

Height

1.15mm

Length

5mm

Automotive Standard

AEC-Q101

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.

Small Footprint (5x6 mm) for Compact Design

Low RDS(on) to Minimize Conduction Losses

Low QG and Capacitance to Minimize Driver Losses

LFPAK4 Package, Industry Standard

PPAP Capable

These Devices are Pb−Free

Liens connexes