onsemi NVMJS2D5N06CL Type N-Channel MOSFET, 164 A, 60 V Enhancement, 8-Pin LFPAK
- N° de stock RS:
- 195-2506
- Référence fabricant:
- NVMJS2D5N06CLTWG
- Fabricant:
- onsemi
Pénurie d'approvisionnement
En raison d'une pénurie d'approvisionnement mondial, nous ne savons pas quand ce produit sera à nouveau en stock.
- N° de stock RS:
- 195-2506
- Référence fabricant:
- NVMJS2D5N06CLTWG
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 164A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | LFPAK | |
| Series | NVMJS2D5N06CL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.3mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 52nC | |
| Maximum Power Dissipation Pd | 113W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 1.15mm | |
| Length | 5mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 164A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type LFPAK | ||
Series NVMJS2D5N06CL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.3mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 52nC | ||
Maximum Power Dissipation Pd 113W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 1.15mm | ||
Length 5mm | ||
Automotive Standard AEC-Q101 | ||
Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK8 Package, Industry Standard
PPAP Capable
These Devices are Pb−Free
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