onsemi NVMYS3D3N06CL Type N-Channel MOSFET, 133 A, 60 V Enhancement, 4-Pin LFPAK NVMYS3D3N06CLTWG
- N° de stock RS:
- 195-2513
- Référence fabricant:
- NVMYS3D3N06CLTWG
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 paquet de 20 unités)*
22,28 €
(TVA exclue)
26,96 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité | le paquet* |
|---|---|---|
| 20 - 180 | 1,114 € | 22,28 € |
| 200 - 480 | 0,96 € | 19,20 € |
| 500 + | 0,832 € | 16,64 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 195-2513
- Référence fabricant:
- NVMYS3D3N06CLTWG
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 133A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | LFPAK | |
| Series | NVMYS3D3N06CL | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 4.2mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 100W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 40.7nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.15mm | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Width | 4.25 mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 133A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type LFPAK | ||
Series NVMYS3D3N06CL | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 4.2mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 100W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 40.7nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Height 1.15mm | ||
Length 5mm | ||
Standards/Approvals No | ||
Width 4.25 mm | ||
Automotive Standard AEC-Q101 | ||
Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK4 Package, Industry Standard
PPAP Capable
These Devices are Pb−Free
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