Wolfspeed C3M N-Channel MOSFET, 22 A, 900 V Enhancement, 7-Pin TO-263 C3M0120090J
- N° de stock RS:
- 192-3492
- Référence fabricant:
- C3M0120090J
- Fabricant:
- Wolfspeed
Actuellement indisponible
Désolés, nous ne savons pas quand ce produit sera réapprovisionné.
- N° de stock RS:
- 192-3492
- Référence fabricant:
- C3M0120090J
- Fabricant:
- Wolfspeed
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Wolfspeed | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 22A | |
| Maximum Drain Source Voltage Vds | 900V | |
| Package Type | TO-263 | |
| Series | C3M | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 120mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 17.3nC | |
| Forward Voltage Vf | 4.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 83W | |
| Maximum Gate Source Voltage Vgs | -8V, 18V | |
| Maximum Operating Temperature | 150°C | |
| Width | 9.12mm | |
| Length | 10.23mm | |
| Standards/Approvals | No | |
| Height | 4.57mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Wolfspeed | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 22A | ||
Maximum Drain Source Voltage Vds 900V | ||
Package Type TO-263 | ||
Series C3M | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 120mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 17.3nC | ||
Forward Voltage Vf 4.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 83W | ||
Maximum Gate Source Voltage Vgs -8V, 18V | ||
Maximum Operating Temperature 150°C | ||
Width 9.12mm | ||
Length 10.23mm | ||
Standards/Approvals No | ||
Height 4.57mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first 900-V MOSFET platform. Optimized for high-frequency power electronics applications, including renewable-energy inverters, electric-vehicle charging systems, and three-phase industrial power supplies, the new 900-V platform enables smaller and higher-efficiency next-generation power conversion systems at cost parity with silicon-based solutions.
New low-impedance package with driver source
High-speed switching with low capacitances
High blocking voltage with low RDS(on)
Avalanche ruggedness
Fast intrinsic diode with low reverse recovery (Qrr)
Easy to parallel and simple to drive
Liens connexes
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