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Sélectionner tout	Attribut	Valeur
	Marque	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	70A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-247
	Series	NTHL
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	33mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	188nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Power Dissipation Pd	500W
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	150°C
	Height	20.82mm
	Standards/Approvals	No
	Width	4.82 mm
	Length	15.87mm
	Automotive Standard	No

	Sélectionner tout
	Marque onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 70A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-247
	Series NTHL
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 33mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 188nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Power Dissipation Pd 500W
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 150°C
	Height 20.82mm
	Standards/Approvals No
	Width 4.82 mm
	Length 15.87mm
	Automotive Standard No

SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.

700 V @ TJ = 150 °C

Ultra Low Gate Charge (Typ. Qg = 188 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 1568 pF)

Excellent body diode performance (low Qrr, robust body diode)

Optimized Capacitance

Typ. RDS(on) = 28 mΩ

Benefits

Lower peak Vds and lower Vgs oscillation

Higher system reliability in LLC and Phase shift full bridge circuit

Lower switching loss

Higher system reliability at low temperature operation

Applications

Telecommunication

Cloud system

Industrial

End Products

Telecom power

Server power

EV charger

Solar / UPS

Unité	Prix par unité
1 - 9	10,12 €
10 +	8,72 €

onsemi NTHL Type N-Channel MOSFET, 70 A, 650 V Enhancement, 3-Pin TO-247 NTHL033N65S3HF

Frais de livraison offerts pour toute commande de plus de 75,00 €

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