onsemi NTHL Type N-Channel MOSFET, 70 A, 650 V Enhancement, 3-Pin TO-247 NTHL033N65S3HF
- N° de stock RS:
- 189-0397
- Référence fabricant:
- NTHL033N65S3HF
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 unité)*
10,12 €
(TVA exclue)
12,25 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Pénurie d'approvisionnement
- Plus 411 unité(s) expédiée(s) à partir du 29 décembre 2025
Notre stock actuel est limité et nos fournisseurs s'attendent à des pénuries.
Unité | Prix par unité |
|---|---|
| 1 - 9 | 10,12 € |
| 10 + | 8,72 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 189-0397
- Référence fabricant:
- NTHL033N65S3HF
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 70A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | NTHL | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 33mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 500W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 188nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 150°C | |
| Height | 20.82mm | |
| Length | 15.87mm | |
| Standards/Approvals | No | |
| Width | 4.82 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 70A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series NTHL | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 33mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 500W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 188nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 150°C | ||
Height 20.82mm | ||
Length 15.87mm | ||
Standards/Approvals No | ||
Width 4.82 mm | ||
Automotive Standard No | ||
SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.
700 V @ TJ = 150 °C
Ultra Low Gate Charge (Typ. Qg = 188 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 1568 pF)
Excellent body diode performance (low Qrr, robust body diode)
Optimized Capacitance
Typ. RDS(on) = 28 mΩ
Benefits
Lower peak Vds and lower Vgs oscillation
Higher system reliability in LLC and Phase shift full bridge circuit
Lower switching loss
Higher system reliability at low temperature operation
Applications
Telecommunication
Cloud system
Industrial
End Products
Telecom power
Server power
EV charger
Solar / UPS
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