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Sélectionner tout	Attribut	Valeur
	Marque	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	20A
	Maximum Drain Source Voltage Vds	650V
	Series	NTHL
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	190mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.3V
	Maximum Gate Source Voltage Vgs	30 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	34nC
	Maximum Power Dissipation Pd	162W
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	20.82mm
	Length	15.87mm
	Width	4.82 mm
	Automotive Standard	No

	Sélectionner tout
	Marque onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 20A
	Maximum Drain Source Voltage Vds 650V
	Series NTHL
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 190mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.3V
	Maximum Gate Source Voltage Vgs 30 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 34nC
	Maximum Power Dissipation Pd 162W
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 20.82mm
	Length 15.87mm
	Width 4.82 mm
	Automotive Standard No

SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.

700 V @ TJ = 150 °C

Ultra Low Gate Charge (Typ. Qg = 35 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 467 pF)

Excellent body diode performance (low Qrr, robust body diode)

Optimized Capacitance

Typ. RDS(on) = 161 mΩ

Benefits

Higher system reliability at low temperature operation

Lower switching loss

Higher system reliability in LLC and Phase shift full bridge circuit

Lower peak Vds and lower Vgs oscillation

Applications

Telecommunication

Cloud system

Industrial

End Products

Telecom power

Server power

EV charger

Solar / UPS

Unité	Prix par unité	le tube*
30 - 90	4,425 €	132,75 €
120 - 240	4,31 €	129,30 €
270 - 480	4,199 €	125,97 €
510 +	4,093 €	122,79 €

onsemi NTHL Type N-Channel MOSFET, 20 A, 650 V Enhancement, 3-Pin TO-247

Frais de livraison offerts pour toute commande de plus de 75,00 €

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