onsemi Type P-Channel MOSFET, 1.3 A, 20 V Enhancement, 3-Pin SOT-23 NTR1P02LT1G
- N° de stock RS:
- 186-8957
- Référence fabricant:
- NTR1P02LT1G
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 paquet de 25 unités)*
5,40 €
(TVA exclue)
6,525 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 4 625 unité(s) expédiée(s) à partir du 02 janvier 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 25 - 75 | 0,216 € | 5,40 € |
| 100 - 225 | 0,186 € | 4,65 € |
| 250 - 475 | 0,162 € | 4,05 € |
| 500 - 975 | 0,142 € | 3,55 € |
| 1000 + | 0,13 € | 3,25 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 186-8957
- Référence fabricant:
- NTR1P02LT1G
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 1.3A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 350mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 3.1nC | |
| Maximum Power Dissipation Pd | 400mW | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.01mm | |
| Standards/Approvals | No | |
| Length | 3.04mm | |
| Width | 1.4 mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 1.3A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 350mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 3.1nC | ||
Maximum Power Dissipation Pd 400mW | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Operating Temperature 150°C | ||
Height 1.01mm | ||
Standards/Approvals No | ||
Length 3.04mm | ||
Width 1.4 mm | ||
Automotive Standard AEC-Q101 | ||
These miniature surface mount MOSFETs low RDS(on) ensure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical applications of these P-Channel Small Signal MOSFETs are dc-dc converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Miniature SOT-23 Surface Mount Package Saves Board Space
End Products
Computers
Printers
PCMCIA cards
Cellular and Cordless Telephones
Applications
DC-DC Converters
Power Management in Portable and Battery Powered Products
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