ROHM RF4E110BN N-Channel MOSFET, 11 A, 30 V, 8-Pin HUML2020 RF4E110BNTR

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Indisponible
RS n'aura plus ce produit en stock.
N° de stock RS:
183-5124
Référence fabricant:
RF4E110BNTR
Fabricant:
ROHM
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Marque

ROHM

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

30 V

Package Type

HUML2020

Series

RF4E110BN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

15.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Length

2.1mm

Number of Elements per Chip

1

Width

2.1mm

Maximum Operating Temperature

150 °C

Typical Gate Charge @ Vgs

24 nC @ 10 V

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

Height

0.65mm

Pays d'origine :
TH
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Low on - resistance.
High Power Small Mold Package (HUML2020L8).
Pb-free lead plating
Halogen Free

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