ROHM QS5U34 N-Channel MOSFET, 1.5 A, 20 V, 5-Pin TSMT QS5U34TR
- N° de stock RS:
- 183-4709
- Référence fabricant:
- QS5U34TR
- Fabricant:
- ROHM
Indisponible
RS n'aura plus ce produit en stock.
- N° de stock RS:
- 183-4709
- Référence fabricant:
- QS5U34TR
- Fabricant:
- ROHM
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | ROHM | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 1.5 A | |
| Maximum Drain Source Voltage | 20 V | |
| Series | QS5U34 | |
| Package Type | TSMT | |
| Mounting Type | Surface Mount | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance | 310 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.3V | |
| Minimum Gate Threshold Voltage | 0.3V | |
| Maximum Power Dissipation | 900 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 10 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 1.8 nC @ 4.5 V | |
| Length | 2.9mm | |
| Width | 1.6mm | |
| Height | 0.85mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
| Sélectionner tout | ||
|---|---|---|
Marque ROHM | ||
Channel Type N | ||
Maximum Continuous Drain Current 1.5 A | ||
Maximum Drain Source Voltage 20 V | ||
Series QS5U34 | ||
Package Type TSMT | ||
Mounting Type Surface Mount | ||
Pin Count 5 | ||
Maximum Drain Source Resistance 310 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.3V | ||
Minimum Gate Threshold Voltage 0.3V | ||
Maximum Power Dissipation 900 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 10 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 1.8 nC @ 4.5 V | ||
Length 2.9mm | ||
Width 1.6mm | ||
Height 0.85mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.
Multiple Schottky Barrier Diodes Middle Power MOSFET
Small Surface Mount Package
Pb Free
Small Surface Mount Package
Pb Free
Liens connexes
- ROHM QS6M3 Dual N/P-Channel MOSFET 20 V 6-Pin TSMT QS6M3TR
- ROHM RQ1C065UN N-Channel MOSFET 20 V, 8-Pin TSMT RQ1C065UNTR
- ROHM RUR020N02 Type N-Channel MOSFET 20 V Enhancement, 3-Pin TSMT RUR020N02TL
- ROHM RUR040N02 Type N-Channel MOSFET 20 V Enhancement, 3-Pin TSMT RUR040N02TL
- ROHM RTR020P02 Type P-Channel MOSFET 20 V Enhancement, 3-Pin TSMT RQ5C020TPTL
- ROHM QS5U16 N-Channel MOSFET 30 V, 5-Pin TSMT QS5U16TR
- ROHM QS5U13 N-Channel MOSFET 30 V, 5-Pin TSMT QS5U13TR
- ROHM RQ5C035BC Type P-Channel MOSFET 20 V Enhancement, 3-Pin TSMT-3 RQ5C035BCTCL
