onsemi FDP N-Channel MOSFET, 222 A, 100 V Enhancement, 3-Pin TO-220 FDP2D3N10C
- N° de stock RS:
- 181-1858
- Référence fabricant:
- FDP2D3N10C
- Fabricant:
- onsemi
Sous-total (1 tube de 800 unités)*
2 620,00 €
(TVA exclue)
3 170,40 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 800 unité(s) expédiée(s) à partir du 21 septembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 800 + | 3,275 € | 2 620,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 181-1858
- Référence fabricant:
- FDP2D3N10C
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 222A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | FDP | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.3mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 108nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 214W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 4.67mm | |
| Length | 10.36mm | |
| Height | 15.21mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 222A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series FDP | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.3mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 108nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 214W | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 4.67mm | ||
Length 10.36mm | ||
Height 15.21mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Max RDS(on) = 2.3 mΩ at VGS = 10 V, ID = 222 A
Power Density & Shielded Gate
High Performance Trench Technology for Extremely Low RDS(on)
High power density with Shielded gate technology
Extremely Low Reverse Recovery Charge, Qrr
Low Vds spike internal snubber function.
Low Gate Charge, QG = 108nC (Typ.)
Low switching loss
High Power and Current Handling Capability
Low Qrr/Trr
Soft recovery performance
Good EMI performance
Synchronous Rectification for ATX / Server / Workstation / Telecom PSU / Adapter and Industrial Power Supplies.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
Server
Telecom
Computing (ATX, Workstation, Adapter, Industrial Power Supplies etc.)
Motor Drive
Uninterruptible Power Supplies
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