Vishay 1 N-Channel Power MOSFET, 1.4 A, 800 V TO-220FP IRFIBE20GPBF
- N° de stock RS:
- 180-8329
- Référence fabricant:
- IRFIBE20GPBF
- Fabricant:
- Vishay
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 180-8329
- Référence fabricant:
- IRFIBE20GPBF
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 1.4A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-220FP | |
| Maximum Drain Source Resistance Rds | 6.5Ω | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Maximum Power Dissipation Pd | 30W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 1.4A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-220FP | ||
Maximum Drain Source Resistance Rds 6.5Ω | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Maximum Power Dissipation Pd 30W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The Vishay IRFIBE20G is a N-channel power MOSFET having drain to source(Vds) voltage of 800V.The gate to source voltage(VGS) is 20V. It is having TO-220 FULLPAK package. It offers drain to source resistance (RDS.) 6.5ohms at 10VGS.
Isolated package
High voltage isolation = 2.5 kVrms (t = 60 s; f = 60 Hz)
Sink to lead creepage distance = 4.8 mm
Liens connexes
- Vishay 1 N-Channel Power MOSFET 800 V TO-220FP IRFIBE20GPBF
- STMicroelectronics SuperMESH N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-220FP STP7NK80ZFP
- Vishay Single 1 N-Channel Power MOSFET 250 V TO-220FP IRFI644GPBF
- Vishay IRFI N-Channel Power MOSFET 100 V Enhancement, 3-Pin TO-220FP IRFI520GPBF
- Vishay IRFI N-Channel Power MOSFET 500 V Enhancement, 3-Pin TO-220FP IRFIB7N50APBF
- Vishay IRFI N-Channel Power MOSFET 500 V Enhancement, 3-Pin TO-220FP IRFI840GPBF
- Vishay IRFI N-Channel Power MOSFET 600 V Enhancement, 3-Pin TO-220FP IRFIB6N60APBF
- Vishay D Series N-Channel Power MOSFET 500 V Enhancement, 3-Pin TO-220FP SIHF5N50D-E3