STMicroelectronics STF Type N-Channel MOSFET, 5 A, 800 V, 3-Pin TO-220FP STF80N1K1K6
- N° de stock RS:
- 330-450
- Référence fabricant:
- STF80N1K1K6
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total (1 tube de 50 unités)*
63,95 €
(TVA exclue)
77,40 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 950 unité(s) expédiée(s) à partir du 26 février 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 450 | 1,279 € | 63,95 € |
| 500 - 950 | 1,215 € | 60,75 € |
| 1000 + | 1,126 € | 56,30 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 330-450
- Référence fabricant:
- STF80N1K1K6
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-220FP | |
| Series | STF | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.1Ω | |
| Typical Gate Charge Qg @ Vgs | 5.7nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 21W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.4mm | |
| Standards/Approvals | No | |
| Height | 9.3mm | |
| Width | 4.6 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-220FP | ||
Series STF | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.1Ω | ||
Typical Gate Charge Qg @ Vgs 5.7nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 21W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 10.4mm | ||
Standards/Approvals No | ||
Height 9.3mm | ||
Width 4.6 mm | ||
Automotive Standard No | ||
Statut RoHS : Exempté
The STMicroelectronics High voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency.
Ultra low gate charge
Zener-protected
Liens connexes
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