Vishay Single 1 Type N-Channel Power MOSFET, 7.9 A, 250 V TO-220FP IRFI644GPBF
- N° de stock RS:
- 180-8325
- Référence fabricant:
- IRFI644GPBF
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 50 unités)*
79,80 €
(TVA exclue)
96,55 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 300 unité(s) expédiée(s) à partir du 05 juin 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 1,596 € | 79,80 € |
| 100 - 200 | 1,50 € | 75,00 € |
| 250 - 450 | 1,357 € | 67,85 € |
| 500 - 1200 | 1,277 € | 63,85 € |
| 1250 + | 1,197 € | 59,85 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 180-8325
- Référence fabricant:
- IRFI644GPBF
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 7.9A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | TO-220FP | |
| Maximum Drain Source Resistance Rds | 0.28Ω | |
| Typical Gate Charge Qg @ Vgs | 68nC | |
| Maximum Power Dissipation Pd | 40W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 7.9A | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type TO-220FP | ||
Maximum Drain Source Resistance Rds 0.28Ω | ||
Typical Gate Charge Qg @ Vgs 68nC | ||
Maximum Power Dissipation Pd 40W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Vishay MOSFET
The Vishay MOSFET is an N-channel, TO-220-3 package is a new age product with a drain-source voltage of 250V and maximum gate-source voltage of 20V. It has a drain-source resistance of 77mohm at a gate-source voltage of 10V. The MOSFET has a maximum power dissipation of 48W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Dynamic dV/dt rating
• Isolated package
• Lead (Pb) free component
• Low thermal resistance
• Operating temperature ranges between -55°C and 150°C
• Sink to lead creepage distance is 4.8 mm
Applications
• Battery chargers
• Inverters
• Power supplies
• Switching mode power supply (SMPS)
Liens connexes
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- Vishay 1 Type N-Channel Power MOSFET 800 V TO-220FP
- Vishay 1 Type N-Channel Power MOSFET 800 V TO-220FP IRFIBE20GPBF
- Vishay IRFI Type N-Channel Power MOSFET 500 V Enhancement, 3-Pin TO-220FP