Vishay TrenchFET Type N-Channel MOSFET, 4.3 A, 60 V Enhancement, 3-Pin SOT-23 SQ2362ES-T1_GE3

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N° de stock RS:
180-8108
Référence fabricant:
SQ2362ES-T1_GE3
Fabricant:
Vishay
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Marque

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4.3A

Maximum Drain Source Voltage Vds

60V

Package Type

SOT-23

Series

TrenchFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

75mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

7.6nC

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

3W

Maximum Operating Temperature

175°C

Width

2.64 mm

Height

1.12mm

Length

3.04mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

Pays d'origine :
CN

Vishay MOSFET


The Vishay surface mount N-channel MOSFET is a new age product with a drain-source voltage of 60V and a maximum gate-source voltage of 20V. It has drain-source resistance of 95mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 3W and continuous drain current of 4.3A. It has a driving voltage of 10V. It is used in automotive applications. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 175°C

• TrenchFET power MOSFET

Certifications


• AEC-Q101

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested

• UIS tested

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