Vishay Type N-Channel MOSFET, 12 A, 30 V, 8-Pin PowerPAK 1212-8 SIS412DN-T1-GE3
- N° de stock RS:
- 180-7909
- Référence fabricant:
- SIS412DN-T1-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Sous-total (1 paquet de 20 unités)*
8,08 €
(TVA exclue)
9,78 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 3 680 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 20 - 180 | 0,404 € | 8,08 € |
| 200 - 480 | 0,396 € | 7,92 € |
| 500 - 980 | 0,312 € | 6,24 € |
| 1000 - 1980 | 0,244 € | 4,88 € |
| 2000 + | 0,219 € | 4,38 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 180-7909
- Référence fabricant:
- SIS412DN-T1-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK 1212-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.03Ω | |
| Typical Gate Charge Qg @ Vgs | 3.8nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 15.6W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC 61249-2-21 | |
| Length | 3.61mm | |
| Height | 0.79mm | |
| Width | 3.61 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK 1212-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.03Ω | ||
Typical Gate Charge Qg @ Vgs 3.8nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 15.6W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC 61249-2-21 | ||
Length 3.61mm | ||
Height 0.79mm | ||
Width 3.61 mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Vishay MOSFET
The Vishay MOSFET is an N-channel, PowerPAK-1212-8 package is a new age product with a drain-source voltage of 30V and maximum gate-source voltage of 20V. It has a drain-source resistance of 24mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 15.6W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen and lead (Pb) free component
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
Applications
• Load switches
• Notebook PCs
• System power
Liens connexes
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