Vishay Type N-Channel MOSFET, 12 A, 30 V, 8-Pin PowerPAK 1212-8
- N° de stock RS:
- 180-7358
- Référence fabricant:
- SIS412DN-T1-GE3
- Fabricant:
- Vishay
Sous-total (1 bobine de 3000 unités)*
1 050,00 €
(TVA exclue)
1 260,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 3 000 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 + | 0,35 € | 1 050,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 180-7358
- Référence fabricant:
- SIS412DN-T1-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK 1212-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.03Ω | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 15.6W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 3.8nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.61mm | |
| Standards/Approvals | IEC 61249-2-21 | |
| Height | 0.79mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK 1212-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.03Ω | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 15.6W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 3.8nC | ||
Maximum Operating Temperature 150°C | ||
Length 3.61mm | ||
Standards/Approvals IEC 61249-2-21 | ||
Height 0.79mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Vishay MOSFET, 30V Maximum Drain Source Voltage, 12A Maximum Continuous Drain Current - SIS412DN-T1-GE3
This n-channel MOSFET is a surface-mount switching device designed for power control in industrial and electronic systems. It operates as a low-voltage switch for managing currents in automation, power conversion and drive stages while meeting standard PCB manufacturing practices.
Features and Benefits:
• 12A continuous drain current for sustained load handling • 30V drain-source rating enabling low-voltage power stages • 0.03Ω Rds(on) minimises conduction losses and heating • 3.8nC typical gate charge for efficient switching performance • 15.6W power dissipation supports high-power SMD applications • -55°C to 150°C operating range for wide-temperature environments
Applications
• Suitable for motor controller low-voltage stages in automation • Ideal for DC-DC converter output switches in power supplies • Used for solid-state load switching in industrial control panels • Can be used for high-current switch nodes on Compact SMD boards
What gate tolerance should be observed during drive design?
The device can tolerate gate voltages up to 20V so gate-drive circuitry should be limited within that range to prevent damage.
How does thermal management affect continuous operation?
With 15.6W maximum dissipation, adequate PCB copper and thermal vias are required to maintain junction temperatures under heavy continuous current.
What package considerations apply for assembly and layout?
The component is supplied in an eight-pin PowerPAK 1212-8 surface package, so footprint and soldering profiles must match that SMD outline for reliable mounting.
Is this component appropriate for automotive-certified designs?
It is not specified as automotive-standard compliant, so it should be treated as an alternative where automotive certification is not mandatory.
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