Vishay SiP32409 Type N-Channel MOSFET, 3.5 A, 5.5 V, 4-Pin TDFN
- N° de stock RS:
- 180-7351
- Référence fabricant:
- SIP32409DNP-T1-GE4
- Fabricant:
- Vishay
Sous-total (1 bobine de 3000 unités)*
537,00 €
(TVA exclue)
651,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 09 novembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 + | 0,179 € | 537,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 180-7351
- Référence fabricant:
- SIP32409DNP-T1-GE4
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3.5A | |
| Maximum Drain Source Voltage Vds | 5.5V | |
| Series | SiP32409 | |
| Package Type | TDFN | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 52mΩ | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 735mW | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 125°C | |
| Length | 1.65mm | |
| Height | 0.6mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3.5A | ||
Maximum Drain Source Voltage Vds 5.5V | ||
Series SiP32409 | ||
Package Type TDFN | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 52mΩ | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 735mW | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 125°C | ||
Length 1.65mm | ||
Height 0.6mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Vishay Load Switch
The Vishay TDFN4 N-channel slew rate controlled switch features a controlled soft on the slew rate of typical 2.5ms. This limits the inrush current for designs of heavy capacitive load and minimizes the resulting voltage drop at the power rails. It has drain-source resistance of 44mohm and outputs current of 3.5A. It integrates with an output discharge circuit for fast turn off. It features a low voltage control logic interface (on/off interface) that can interface with low voltage control signals without extra level shifting circuit. The load switch has an exceptionally low shutdown current and provides reverse blocking to prevent high current flowing into the power source.
Features and Benefits
• 1.1V to 5.5V operation voltage range
• 42mW typical from 1.5V to 5V
• Flat row RON down to 1.2V
• Low quiescent current < 1μA when disabled 10.5μA typical at VIN = 1.2V
• Operating temperature ranges between -40°C and 85°C
• Reverse current blocking when switch is off
• Slew rate controlled turn on: 2.5ms at 3.6V
Applications
• Data storage devices
• Digital camera
• GPS navigation devices
• Notebook/netbook computers
• Optical, industrial, medical, and healthcare devices
• PDAs/smart phones
• Portable media players
• Tablet PC
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
Liens connexes
- Vishay SiP32409 Type N-Channel MOSFET 5.5 V, 4-Pin TDFN SIP32409DNP-T1-GE4
- DG723DN-T1-GE4 Vishay 1.8 → 5.5 V, 8-Pin TDFN
- onsemi Type N-Channel MOSFET 150 V N, 8-Pin TDFN
- onsemi Type N-Channel MOSFET 150 V N, 8-Pin TDFN NTMTSC4D3N15MC
- Vishay TrenchFET Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Vishay Si2377EDS Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 SI2307CDS-T1-GE3
- Vishay Si2377EDS Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23 SI2377EDS-T1-GE3