Références fabricant

Vishay Single TrenchFET Type P-Channel MOSFET, 40 A, 30 V, 8-Pin PowerPAK SO-8

N° de stock RS:: 180-7310
Référence fabricant:: SI7139DP-T1-GE3
Fabricant:: Vishay

Vishay Single TrenchFET Type P-Channel MOSFET, 40 A, 30 V, 8-Pin PowerPAK SO-8

Sous-total (1 bobine de 3000 unités)*

1 596,00 €

(TVA exclue)

1 932,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 75,00 €

Dernier stock RS

3 000 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution

Unité	Prix par unité	la bobine*
3000 +	0,532 €	1 596,00 €

*Prix donné à titre indicatif

N° de stock RS:: 180-7310
Référence fabricant:: SI7139DP-T1-GE3
Fabricant:: Vishay

Spécifications

Documentation technique

Législations et de normes

Détails du produit

Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.

Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	40A
	Maximum Drain Source Voltage Vds	30V
	Package Type	PowerPAK SO-8
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	00090Ω
	Maximum Power Dissipation Pd	48W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	49.5nC
	Transistor Configuration	Single
	Maximum Operating Temperature	150°C
	Width	5.26 mm
	Height	1.12mm
	Standards/Approvals	RoHS
	Length	6.25mm
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 40A
	Maximum Drain Source Voltage Vds 30V
	Package Type PowerPAK SO-8
	Series TrenchFET
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 00090Ω
	Maximum Power Dissipation Pd 48W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 49.5nC
	Transistor Configuration Single
	Maximum Operating Temperature 150°C
	Width 5.26 mm
	Height 1.12mm
	Standards/Approvals RoHS
	Length 6.25mm
	Automotive Standard No

Datasheet

Pays d'origine :: CN

Vishay MOSFET

The Vishay MOSFET is a P-channel, PowerPAK-SO-8 package is a new age product with a drain-source voltage of 30V and maximum gate-source voltage of 20V. It has a drain-source resistance of 5.5mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 48W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen and Lead (Pb) free component

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• Adaptor switches

• Battery switches

• Load switches

• Notebook computers

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested

• UIS tested