Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 6.5 A, 60 V Enhancement, 8-Pin SO-8

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N° de stock RS:
180-7299
Référence fabricant:
SI4946BEY-T1-E3
Fabricant:
Vishay
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Marque

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

6.5A

Maximum Drain Source Voltage Vds

60V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.052Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

3.7W

Typical Gate Charge Qg @ Vgs

9.2nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Transistor Configuration

Dual

Standards/Approvals

RoHS 2002/95/EC, IEC 61249-2-21

Length

5mm

Height

1.75mm

Width

4 mm

Number of Elements per Chip

2

Automotive Standard

No

Vishay MOSFET


The Vishay surface mount dual N-channel MOSFET is a new age product with a drain-source voltage of 60V. It has drain-source resistance of 41mohm at a gate-source voltage of 10V. It has continuous drain current of 6.5A and a maximum power rating of 3.7W. It has application in load switches for portable devices. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 175°C

• TrenchFET power MOSFET

Certifications


• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21

• Rg tested

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