onsemi NVMFS5C638NL Type N-Channel MOSFET, 133 A, 60 V Enhancement, 5-Pin DFN NVMFS5C638NLT1G
- N° de stock RS:
- 178-4407
- Référence fabricant:
- NVMFS5C638NLT1G
- Fabricant:
- onsemi
Sous-total (1 paquet de 10 unités)*
7,48 €
(TVA exclue)
9,05 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Dernier stock RS
- 1 450 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 + | 0,748 € | 7,48 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 178-4407
- Référence fabricant:
- NVMFS5C638NLT1G
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 133A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | NVMFS5C638NL | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 100W | |
| Typical Gate Charge Qg @ Vgs | 18.4nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 5.1mm | |
| Width | 6.1 mm | |
| Standards/Approvals | No | |
| Height | 1.05mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 133A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series NVMFS5C638NL | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 100W | ||
Typical Gate Charge Qg @ Vgs 18.4nC | ||
Maximum Operating Temperature 175°C | ||
Length 5.1mm | ||
Width 6.1 mm | ||
Standards/Approvals No | ||
Height 1.05mm | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- MY
Automotive Power MOSFET in a 5 x 6 mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection.Suitable for automotive applications.
Features
Industry Standard Small Footprint 5 x 6 mm Package
Low RDS(on)
Low QG and Capacitance
NVMFS5C638NLWF - Wettable Flank Option
PPAP capable
Benefits
Compact Design and Standard footprint for direct drop-in
Minimize Conduction Losses
Minimize Driver Losses
Enhanced Optical Inspection
Applications
Reverser Battery protection
Switching power supplies
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
End Products
Solenoid Driver – ABS, Fuel injection
Motor Control – EPS, Wipers, Fans, Seats, etc.
Load Switch – ECU, Chassis, Body
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