onsemi NVMFS5H663NL Type N-Channel MOSFET, 67 A, 60 V Enhancement, 5-Pin DFN
- N° de stock RS:
- 185-8153
- Référence fabricant:
- NVMFS5H663NLT1G
- Fabricant:
- onsemi
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 185-8153
- Référence fabricant:
- NVMFS5H663NLT1G
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 67A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | DFN | |
| Series | NVMFS5H663NL | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 10mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 63W | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 5.1mm | |
| Height | 1.05mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 67A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type DFN | ||
Series NVMFS5H663NL | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 10mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 63W | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 5.1mm | ||
Height 1.05mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Non conforme
- Pays d'origine :
- MY
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
PPAP Capable
These Devices are Pb−Free
Liens connexes
- onsemi NVMFS5H663NL Type N-Channel MOSFET 60 V Enhancement, 5-Pin DFN NVMFS5H663NLT1G
- onsemi Type N-Channel MOSFET 60 V Enhancement, 8-Pin DFN
- onsemi Type N-Channel MOSFET 60 V Enhancement, 8-Pin DFN NVMTS0D7N06CLTXG
- onsemi Type N-Channel MOSFET 60 V Enhancement, 5-Pin DFN NVMFS5C670NLT1G
- onsemi NTMFS Type N-Channel MOSFET 60 V Enhancement, 5-Pin DFN
- onsemi NTMTS001N06CL Type N-Channel MOSFET 60 V Enhancement, 8-Pin DFN
- onsemi NVMFS5C638NL Type N-Channel MOSFET 60 V Enhancement, 5-Pin DFN
- onsemi NVMFS5C680NL Type N-Channel MOSFET 60 V Enhancement, 5-Pin DFN