Vishay Siliconix SQJ872EP Type N-Channel MOSFET, 24.5 A, 150 V Enhancement, 8-Pin SO-8L SQJ872EP-T1_GE3
- N° de stock RS:
- 178-3903
- Référence fabricant:
- SQJ872EP-T1_GE3
- Fabricant:
- Vishay Siliconix
Sous-total (1 paquet de 10 unités)*
11,52 €
(TVA exclue)
13,94 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
- 2 920 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 90 | 1,152 € | 11,52 € |
| 100 - 490 | 0,978 € | 9,78 € |
| 500 - 990 | 0,864 € | 8,64 € |
| 1000 + | 0,749 € | 7,49 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 178-3903
- Référence fabricant:
- SQJ872EP-T1_GE3
- Fabricant:
- Vishay Siliconix
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay Siliconix | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 24.5A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | SQJ872EP | |
| Package Type | SO-8L | |
| Mount Type | PCB | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0395Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 55W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Width | 5mm | |
| Height | 1.07mm | |
| Length | 5.99mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay Siliconix | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 24.5A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series SQJ872EP | ||
Package Type SO-8L | ||
Mount Type PCB | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0395Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 55W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Width 5mm | ||
Height 1.07mm | ||
Length 5.99mm | ||
Automotive Standard AEC-Q101 | ||
Statut RoHS : Exempté
- Pays d'origine :
- CN
Vishay SQJ872EP Series MOSFET, 150V Drain Source Voltage, 24.5A Continuous Drain Current - SQJ872EP-T1_GE3
Features and Benefits:
• High voltage capability 150V enabling robust switching headroom
• Continuous current rating 24.5A supporting substantial load currents
• Gate charge 14nC enabling efficient switching control
• Power dissipation 55W allowing sustained thermal load handling
• Wide gate tolerance ±20V making gate drive design flexible
Applications
• Ideal for industrial motor drive switch arrays
• Used with DC-DC converters in high-voltage systems
• Can be used for synchronous rectification in power supplies
• Useful in inverter and UPS front-end switching stages
What temperature range can it tolerate in harsh installations?
What package and mounting approach does it use for board assembly?
How does its forward voltage impact system design?
Is the device suitable for regulated manufacturing and environmental requirements?
Liens connexes
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