onsemi FCH Type N-Channel MOSFET, 75 A, 650 V Enhancement, 4-Pin TO-247
- N° de stock RS:
- 172-3421
- Référence fabricant:
- FCH023N65S3L4
- Fabricant:
- onsemi
Sous-total (1 tube de 450 unités)*
6 802,20 €
(TVA exclue)
8 230,50 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 06 mai 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 450 + | 15,116 € | 6 802,20 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 172-3421
- Référence fabricant:
- FCH023N65S3L4
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 75A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | FCH | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 23mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 222nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 595W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.2 mm | |
| Standards/Approvals | No | |
| Height | 22.74mm | |
| Length | 15.8mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 75A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series FCH | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 23mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 222nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 595W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 5.2 mm | ||
Standards/Approvals No | ||
Height 22.74mm | ||
Length 15.8mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for various power system for miniaturization and higher efficiency.
700 V @ TJ = 150 oC
Higher system reliability at low temperature operation
Ultra Low Gate Charge (Typ. Qg = 78 nC)
Lower switching loss
Low Effective Output Capacitance (Typ. Coss(eff.) = 715 pF)
Lower switching loss
Optimized Capacitance
Lower peak Vds and lower Vgs oscillation
Typ. RDS(on) = 62 mΩ
Wave soldering guarantee
Computing
Telecomunication
Industrial
Telecom / Server
Solar inverter / UPS
EVC
Liens connexes
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