ROHM RQ1C065UN N-Channel MOSFET, 6.5 A, 20 V, 8-Pin TSMT RQ1C065UNTR

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Indisponible
RS n'aura plus ce produit en stock.
Options de conditionnement :
N° de stock RS:
172-0527
Référence fabricant:
RQ1C065UNTR
Fabricant:
ROHM
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Marque

ROHM

Channel Type

N

Maximum Continuous Drain Current

6.5 A

Maximum Drain Source Voltage

20 V

Package Type

TSMT

Series

RQ1C065UN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

58 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.3V

Maximum Power Dissipation

1.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±10 V

Number of Elements per Chip

1

Width

2.5mm

Typical Gate Charge @ Vgs

11 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Length

3.1mm

Height

0.8mm

Forward Diode Voltage

1.2V

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.

Low voltage(1.5V) drive type
Nch Small-signal MOSFET
Small Surface Mount Package
Pb Free

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