Nexperia Dual NX3020NAKS 2 Type N-Channel Trench MOSFET, 180 mA, 30 V Enhancement, 6-Pin TSSOP
- N° de stock RS:
- 170-4878
- Référence fabricant:
- NX3020NAKS,115
- Fabricant:
- Nexperia
Sous-total (1 bobine de 3000 unités)*
135,00 €
(TVA exclue)
162,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 08 juillet 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 + | 0,045 € | 135,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 170-4878
- Référence fabricant:
- NX3020NAKS,115
- Fabricant:
- Nexperia
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Nexperia | |
| Channel Type | Type N | |
| Product Type | Trench MOSFET | |
| Maximum Continuous Drain Current Id | 180mA | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | NX3020NAKS | |
| Package Type | TSSOP | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 13Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | 150°C | |
| Typical Gate Charge Qg @ Vgs | 0.26nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1.1W | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | -55°C | |
| Height | 1mm | |
| Width | 1.35 mm | |
| Length | 2.2mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Nexperia | ||
Channel Type Type N | ||
Product Type Trench MOSFET | ||
Maximum Continuous Drain Current Id 180mA | ||
Maximum Drain Source Voltage Vds 30V | ||
Series NX3020NAKS | ||
Package Type TSSOP | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 13Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature 150°C | ||
Typical Gate Charge Qg @ Vgs 0.26nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1.1W | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature -55°C | ||
Height 1mm | ||
Width 1.35 mm | ||
Length 2.2mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Robust interfacing between asynchronous and synchronous systems. Flip-flops are Basic storage elements in digital electronics. By only allowing the output to change on an edge transition, flip-flops provide a robust Interface between asynchronous and synchronous systems. With a choice of either positive or negative edge triggered options they provide added design flexibility.
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Very fast switching
Trench MOSFET technology
ESD protection
Low threshold voltage
Target applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
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