Infineon CoolMOS P6 Type N-Channel MOSFET, 37.9 A, 650 V Enhancement, 4-Pin TO-220 IPP60R099P6XKSA1

Voir l’ensemble des MOSFETs

Sous-total (1 unité)*

3,17 €

(TVA exclue)

3,84 €

(TVA incluse)

Add to Basket
sélectionner ou taper la quantité
En stock
  • Plus 455 unité(s) expédiée(s) à partir du 31 décembre 2025
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité
Prix par unité
1 +3,17 €

*Prix donné à titre indicatif

Options de conditionnement :
N° de stock RS:
130-0924
Référence fabricant:
IPP60R099P6XKSA1
Fabricant:
Infineon
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout

Marque

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

37.9A

Maximum Drain Source Voltage Vds

650V

Series

CoolMOS P6

Package Type

TO-220

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

99mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

70nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

278W

Maximum Operating Temperature

150°C

Width

4.57 mm

Length

10.36mm

Height

15.95mm

Standards/Approvals

No

Automotive Standard

No

Infineon CoolMOS™ P6 Series MOSFET, 37.9A Maximum Continuous Drain Current, 278W Maximum Power Dissipation - IPP60R099P6XKSA1


This MOSFET is tailored for high-performance applications in need of efficient power management. With a maximum continuous drain current of 37.9A and a drain-source voltage rating of 650V, it excels in automation and electronic sectors. Its enhancement mode N-channel configuration allows for effective switching capabilities, making it a preferred option for professionals in the electrical and mechanical industries.

Features & Benefits


• Low RDS(on) of 99mΩ improves switching efficiency

• Can dissipate up to 278W for enhanced durability

• Functions well under high temperatures of up to +150°C

• ESD protection above 2kV ensures dependable operation

• Suitable for both hard and soft switching applications

• Packaged in TO-220 for flexible mounting options

Applications


• Used in PFC stages for efficient power conversion

• Applicable in hard-switching PWM stages to boost performance

• Ideal for resonant switching stages in various electronic products

• Utilised in adapters and power supplies for electronic devices

• Effective in industrial automation systems demanding high power

What is the suitable gate-source voltage range for operation?


The appropriate gate-source voltage range for operation is -30V to +30V, ensuring safe and effective switching.

How does the low RDS(on) Value benefit power efficiency?


The low resistance enhances power efficiency by reducing conduction losses, leading to decreased heat generation during operation.

What is the maximum power dissipation capability during usage?


The maximum power dissipation capacity during operation is 278W, allowing robust performance under challenging conditions.

Is there any special consideration for using this component in parallel configurations?


When using in parallel, it is advisable to use ferrite beads on the gate or separate totem poles to optimise performance and minimise oscillations.

What thermal management practices should be implemented?


Effective thermal management practices include proper heat sinking and monitoring temperature during operation to maintain performance within specified limits.

Liens connexes