IXYS HiperFET, Polar3 N-Channel MOSFET, 50 A, 500 V, 3-Pin TO-3P IXFQ50N50P3
- N° de stock RS:
- 168-4740
- Référence fabricant:
- IXFQ50N50P3
- Fabricant:
- IXYS
Indisponible
RS n'aura plus ce produit en stock.
- N° de stock RS:
- 168-4740
- Référence fabricant:
- IXFQ50N50P3
- Fabricant:
- IXYS
Spécifications
Documentation technique
Législations et de normes
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | IXYS | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 50 A | |
| Maximum Drain Source Voltage | 500 V | |
| Series | HiperFET, Polar3 | |
| Package Type | TO-3P | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 125 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Maximum Power Dissipation | 960 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Width | 4.9mm | |
| Length | 15.8mm | |
| Typical Gate Charge @ Vgs | 85 nC @ 10 V | |
| Height | 20.3mm | |
| Minimum Operating Temperature | -55 °C | |
| Sélectionner tout | ||
|---|---|---|
Marque IXYS | ||
Channel Type N | ||
Maximum Continuous Drain Current 50 A | ||
Maximum Drain Source Voltage 500 V | ||
Series HiperFET, Polar3 | ||
Package Type TO-3P | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 125 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Maximum Power Dissipation 960 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Width 4.9mm | ||
Length 15.8mm | ||
Typical Gate Charge @ Vgs 85 nC @ 10 V | ||
Height 20.3mm | ||
Minimum Operating Temperature -55 °C | ||
- Pays d'origine :
- US
Liens connexes
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