N-Channel MOSFET, 150 A, 300 V, 3-Pin TO-264 IXYS IXFK150N30P3

N° de stock RS:: 168-4733
Référence fabricant:: IXFK150N30P3
Fabricant:: IXYS

N-Channel MOSFET, 150 A, 300 V, 3-Pin TO-264 IXYS IXFK150N30P3

En cours d'approvisionnement - expédition le 09/10/2024, livraison sous 4 jour(s)

Prix L'unité (dans un tube de 25)

18,292 €

(TVA exclue)

22,133 €

(TVA incluse)

Unité	Prix par unité	le tube*
25 +	18,292 €	457,30 €

*prix conseillé

N° de stock RS:: 168-4733
Référence fabricant:: IXFK150N30P3
Fabricant:: IXYS

IXFK150N30P3, IXFX150N30P3, Polar3 HiPerFET, Power MOSFET, N-Channel Enhancement Mode, Avalanche Rated, Fast Intrinsic Diode
ESD Control Selection Guide V1

Attribut	Valeur
Channel Type	N
Maximum Continuous Drain Current	150 A
Maximum Drain Source Voltage	300 V
Series	HiperFET, Polar3
Package Type	TO-264
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	19 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	1.3 kW
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Width	5.13mm
Length	19.96mm
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	197 nC @ 10 V
Height	26.16mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 150 A, 300 V, 3-Pin TO-264 IXYS IXFK150N30P3

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series