N-Channel MOSFET, 120 A, 300 V, 3-Pin TO-264 IXYS IXFK120N30P3

N° de stock RS:: 146-1745
Référence fabricant:: IXFK120N30P3
Fabricant:: IXYS

N-Channel MOSFET, 120 A, 300 V, 3-Pin TO-264 IXYS IXFK120N30P3

24 En stock pour livraison sous 4 jour(s)

Prix L'unité (dans un tube de 25)

15,483 €

(TVA exclue)

18,734 €

(TVA incluse)

Unité	Prix par unité	le tube*
25 +	15,483 €	387,075 €

*prix conseillé

N° de stock RS:: 146-1745
Référence fabricant:: IXFK120N30P3
Fabricant:: IXYS

IXFK120N30P3, IXFX120N30P3, Polar3 HiPerFET, Power MOSFETs, N-Channel Enhancement Mode, Avalanche Rated, Fast Intrinsic Diode
ESD Control Selection Guide V1

Attribut	Valeur
Channel Type	N
Maximum Continuous Drain Current	120 A
Maximum Drain Source Voltage	300 V
Package Type	TO-264
Series	HiperFET, Polar3
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	27 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	1.13 kW
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	150 nC @ 10 V
Length	19.96mm
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Width	5.13mm
Number of Elements per Chip	1
Height	26.16mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 120 A, 300 V, 3-Pin TO-264 IXYS IXFK120N30P3

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series