onsemi PowerTrench Dual P-Channel MOSFET, 500 mA, 20 V, 6-Pin SOT-363 (SC-70) FDG6318P
- N° de stock RS:
- 166-2945
- Référence fabricant:
- FDG6318P
- Fabricant:
- onsemi
Indisponible
RS n'aura plus ce produit en stock.
- N° de stock RS:
- 166-2945
- Référence fabricant:
- FDG6318P
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 500 mA | |
| Maximum Drain Source Voltage | 20 V | |
| Series | PowerTrench | |
| Package Type | SOT-363 (SC-70) | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 1.2 Ω | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 0.65V | |
| Maximum Power Dissipation | 300 mW | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -12 V, +12 V | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 0.86 nC @ 4.5 V | |
| Length | 2mm | |
| Width | 1.25mm | |
| Number of Elements per Chip | 2 | |
| Maximum Operating Temperature | +150 °C | |
| Height | 1mm | |
| Minimum Operating Temperature | -55 °C | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 500 mA | ||
Maximum Drain Source Voltage 20 V | ||
Series PowerTrench | ||
Package Type SOT-363 (SC-70) | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 1.2 Ω | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.65V | ||
Maximum Power Dissipation 300 mW | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 0.86 nC @ 4.5 V | ||
Length 2mm | ||
Width 1.25mm | ||
Number of Elements per Chip 2 | ||
Maximum Operating Temperature +150 °C | ||
Height 1mm | ||
Minimum Operating Temperature -55 °C | ||
Digital FETs, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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